The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 1995
Filed:
Dec. 16, 1993
Michael Armacost, Wallkill, NY (US);
A Richard Baker, Jr, Burlington, VT (US);
Wayne S Berry, Essex Junction, VT (US);
Daniel A Carl, Poughkeepsie, NY (US);
Donald M Kenney, Shelburne, VT (US);
Thomas J Licata, Lagrangeville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The subject invention provides a method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the charge storage capacity of the capacitor. This is accomplished by utilizing a micro mask formed by agglomeration on the surface of the substrate. The agglomerated material, such as gold, titanium nitride or titanium silicide, is used as a mask for selectively etching the substrate to form recesses therein. Alternatively, an oxide transfer mask can be utilized with the agglomerated material micro mask to etch the substrate.