The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 1995
Filed:
Nov. 26, 1991
James A Cooper, Jr, West Lafayette, IN (US);
John W Palmour, Cary, NC (US);
Calvin H Carter, Jr, Cary, NC (US);
Cree Research, Inc., Durham, NC (US);
Purdue Research Foundation, Lafayette, IN (US);
Abstract
A random access memory (RAM) cell in 6H-SiC having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET.