The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 1995
Filed:
Oct. 24, 1994
Teo Y Meng, Singapore, SG;
Liu Lianjun, Singapore, SG;
Chartered Semiconductor Manufacturing Pte, Ltd., Singapore, SG;
Abstract
This invention provides a method of forming contact holes and via holes in interlevel dielectric which insure good metal stepcoverage. The contact or via holes have tapered sides and smoothed edges. The method uses isotropic etching, anisotropic etching, and argon sputter etching in vacuum and does not require high temperature contact reflow. The final argon sputter etch is a timed etch that smoothes all sharp edges, exposes the regions where electrical contact will be made, and planarizes the interlevel dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile