The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Mar. 09, 1994
Toshio Sakakibara, Nishio, JP;
Makio Iida, Ichinomiya, JP;
Takayuki Sugisaka, Okazaki, JP;
Shoji Miura, Nukata, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A semiconductor device is provided in which a contact is very simply formed on conductive material for capacitive coupling prevention. Two silicon substrates are bonded through a silicon oxide film. And a trench extending to the silicon oxide film is formed in one of silicon substrates so as to isolate between plural circuit elements from each other, and islands for circuit element formation are compartmently formed by the trench. A silicon oxide film is formed on an outer periphery portion of the islands for circuit element formation. Furthermore, an island for capacitive coupling prevention is formed by the silicon substrate between the islands for circuit element formation and is applied thereto to be maintained in an electric potential of constant.