The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 1995
Filed:
Dec. 14, 1994
Applicant:
Inventors:
Ying-Tzung Wang, Hsinchu, TW;
Sheng-Hsing Yang, Hsinchu, TW;
Assignee:
United Microelectronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 32 ; 437 34 ; 437162 ; 437 59 ; 148D / ;
Abstract
A lateral bipolar transistor and method of making the transistor are disclosed. The device is made by etching a trench around a central region of a semiconductor body. An emitter is buried beneath the surface of this central area and contact to it is made via a self-alignment technique. The collector region of the transistor is contacted through the floor of the trench while the base region of the transistor is contacted in a region that surrounds the trench. The described method is compatible with the simultaneous manufacture of FET devices on the same chip.