The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 1995
Filed:
Nov. 17, 1994
Chitranjan N Reddy, Milpitas, CA (US);
Ajit Medhekar, San Jose, CA (US);
Alliance Semiconductor Corporation, , DE (US);
Abstract
An address transition detection (ATD) circuit provides an address transition detection pulse in response to either a high-to-low or low-to-high external address transition. The ATD circuit includes an address buffer that translates an externally applied address signal into an internal address signal and its logical complement. Two delay chains, each of which includes inverters, capacitors, a NAND gate and a CMOS pass gate, combine with the address buffer and an n-channel pull-down transistor to provide the ATD circuit. The outputs of the CMOS pass-gates are connected to the gate of the pull-down transistor. The drain of the pull-down transistor serves as the local ATD node of a dual-load feed-back controlled ATD pulse generator. The ATD local node is common to address buffers that select memory cells within a particular memory block. Address buffers responsible for switching between blocks have separate feedback-controlled ATD pulse generators in order to optimize the access time of the memory device.