The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 1995
Filed:
Jan. 15, 1992
Applicant:
Inventors:
Fletcher Jones, Ossining, NY (US);
Kenneth J Muroski, Jr, Millbrook, NY (US);
Bennett Robinson, New York, NY (US);
Assignee:
International Business Machines Corporation Inc., Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
216 37 ; 118715 ; 118724 ; 118733 ; 1187 / ; 156345 ; 216 67 ; 216 79 ;
Abstract
Processes for producing and using a novel CVD apparatus for depositing silicon layers onto suitable substrates and for the in-situ etching removal of background silicon deposits from the interior walls of the apparatus. The invention comprises using an apparatus having a fused quartz reaction chamber and precoating the interior wall of the reaction chamber with a thin continuous barrier layer of Al.sub.2 O.sub.3 which is inert to the etching gas introduced for the removal of the background silicon deposits.
Published as:
EP0555546A1; US5443686A;