The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 1995

Filed:

Sep. 08, 1993
Applicant:
Inventors:

Hiroshi Shiraishi, Hachioji, JP;

Takumi Ueno, Hachioji, JP;

Fumio Murai, Tokyo, JP;

Hajime Hayakawa, Kunitachi, JP;

Asao Isobe, Hitachi, JP;

Assignees:

Hitachi, Ltd., Tokyo, JP;

Hitachi Chemical Company, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03C / ; B44C / ;
U.S. Cl.
CPC ...
430296 ; 430271 ; 430313 ; 430317 ; 430318 ; 430323 ; 430944 ; 430967 ; 430325 ; 216 47 ; 216 48 ; 216 51 ; 216 13 ; 216 67 ; 1566431 ;
Abstract

Electrical charge accumulation caused by exposure to a charged particle beam during the formation of latent image pattern can be reduced and thus the positional deviation of the pattern by using a bottom-resist layer comprising a radiation-induced conductive composition. Highly integrated semiconductor device can be made easily and in high yields. The positional deviation can further be reduced by exposing a charge particle beam patterning apparatus substantially simultaneously with an actinic radiation such as ultraviolet light, X-ray, and infrared light.


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