The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1995
Filed:
Apr. 27, 1993
Stephen F Geissler, Underhill, VT (US);
Josef W Korejwa, Shelburne, VT (US);
Jerome B Lasky, Essex Junction, VT (US);
Pai-Hung Pan, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A silicon nitride layer in a semiconductor device is oxidized by exposure to a mixture of an oxygen reactant and a dilute amount of a fluorine-containing compound at a temperature sufficiently high to substantially cause the oxidation of the silicon nitride. Generally, a temperature greater than about 600.degree. C. is sufficient to cause such oxidation, although some oxidation may occur at lower temperatures. The concentration of the fluorine-containing compound is also not critical, but is generally between about 100 to 1500 ppm by volume relative to the total mixture volume. Preferably, NF.sub.3 is the fluorine-containing compound, and a temperature greater than about 700.degree. C. at a concentration of between about 100 to 1000 ppm is used.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile