The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 1995
Filed:
Jul. 13, 1994
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A new method for fabricating a storage capacitor, on a dynamic random access memory (DRAM) cell, having a ring-type sidewall was accomplished. The method involves opening the self-aligned node contact to the source/drain area of the field effect transistor and forming the bottom capacitor electrode. The same photoresist mask used to open the self-aligned node contact is later used to mask and partially etch the polysilicon bottom capacitor electrode to form the ring-type sidewall on the bottom electrode. The storage capacitor is then completed by forming a thin capacitor dielectric and depositing the top electrode. The method provides a simple process that increases the capacitance of the storage capacitor by about 40 percent while not adversely affecting the leakage current.