The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 1995
Filed:
Jun. 25, 1993
Keishi Saitoh, Nagahama, JP;
Tatsuyuki Aoike, Nagahama, JP;
Masafumi Sano, Nagahama, JP;
Mitsuyuki Niwa, Nagahama, JP;
Jinsho Matsuyama, Nagahama, JP;
Toshimitsu Kariya, Nagahama, JP;
Yuzou Kouda, Nagahama, JP;
Ryou Hayashi, Nagahama, JP;
Masahiko Tonogaki, Tokyo, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of quickly depositing a non-single-crystal semiconductor film and forming a silicon-type non-single-crystal photovoltaic device, and a method of continuously manufacturing the photovoltaic devices. By this method the deposited film is formed by decomposing a raw material gas with microwave energy which is lower than the microwave energy required to completely decompose the raw material gas. RF energy is applied at the same time which is higher in energy than the microwave energy. The microwave energy acts on the raw material gas at an internal pressure level of 50 mTorr or lower to form a uniform non-single-crystal semiconductor film with excellent electrical characteristics and reduced light deterioration.