The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 1995
Filed:
Feb. 18, 1993
Ralph E Kauffman, Boise, ID (US);
Michael J Prucha, Bigfork, MT (US);
James Beck, Boise, ID (US);
Randhir P Thakur, Boise, ID (US);
Annette L Martin, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of chemical vapor depositing a titanium nitride layer on a semiconductor wafer within a chemical vapor deposition reactor includes: a) positioning a wafer within a chemical vapor deposition reactor; b) injecting gaseous TiCl.sub.4, NH.sub.3 and N.sub.2 to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and NH.sub.3 to deposit a uniform film comprising titanium nitride on the wafer, the selected temperature being less than or equal to about 500.degree. C. With a TiN film outwardly exposed, a wafer is annealed by the sequential steps of, a) rapid thermal processing the wafer having the outwardly exposed TiN film to a temperature from about 580.degree. C. to about 700.degree. C.; b) exposing the wafer to NH.sub.3 gas at a temperature from about 580.degree. C. to about 700.degree. C. for at least about 5 seconds to drive chlorine from the TiN film; c) rapid thermal processing the wafer to a temperature of at least about 780.degree. C.; and d) exposing the wafer to N.sub.2 gas at a temperature of at least about 780.degree. C. for at least about 10 seconds.