The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 1995
Filed:
Jan. 06, 1994
Daniel A Koos, Boise, ID (US);
Scott Meikle, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A semiconductor processing method of detecting polishing end point from a polishing planarization process includes: a) impinging laser light onto an area of an outermost surface of a semiconductor substrate at an angle of incidence of at least 70.degree. from a line normal relative to the substrate (at least 60.degree. for s-polarized light), the impinged laser light predominantly reflecting off the area as opposed to transmitting therethrough; b) measuring intensity of the light reflected off the area; c) polishing the substrate outermost surface; d) repeating step 'a' then step 'b'; and e) comparing a prior measured intensity of reflected light with a later measured intensity of reflected light to determine a change in degree of planarity of the semiconductor substrate outermost surface as a result of polishing.