The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 1995

Filed:

Jul. 09, 1993
Applicant:
Inventors:

David J Keller, Boise, ID (US);

Debra K Gould, Nampa, ID (US);

Assignee:

Micron Semiconductor, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156662 ; 156643 ; 156646 ; 156657 ; 156653 ;
Abstract

A cleaner, selective etch process wherein NF.sub.3 ions and nitrogen ions are employed to bombard a patterned nitride layer disposed superjacent an oxide layer, thereby creating substantially vertical sidewalls, especially useful when etching submicron features.


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