The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 1994
Filed:
Jul. 28, 1992
David A Vidusek, Camas, WA (US);
Sharp Kabushiki Kaisha, Osaka, JP;
Sharp Microelectronics Technology, Inc., Camas, WA (US);
Abstract
The invention provides a trilayer structure and photolithographic method which permits use of high-resolution optics with a relatively small depth of focus for patterning a substrate. A trilayer lithographic structure in accordance with the invention comprises: (a) an out-gas resistant planarization layer deposited on a substrate; (b) a chemical-vapor-deposited interfacial film formed on the planarization layer; and (c) a photosensitive resist layer of a thickness equal to or less than one micron deposited on the interfacial film. A method in accordance with the invention comprises the steps of: (a) depositing an out-gas resistant planarization layer on a substrate; (b) chemical-vapor-depositing an interfacial film on the planarization layer; and (c) forming a photosensitive resist layer of a thickness equal to or less than one micron on the interfacial film.