The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 1994
Filed:
Jun. 10, 1992
Applicant:
Inventors:
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427569 ; 427255 ; 4272551 ; 4272552 ; 4272553 ; 4272557 ; 4274192 ; 427574 ; 427579 ;
Abstract
A process for depositing void-free silicon oxide layers over stepped topography comprising depositing a first silicon oxide seed layer which is doped with nitrogen from a plasma of tetraethoxysilane and a nitrogen-containing gas, and depositing thereover a silicon oxide layer from a mixture of tetraethoxysilane, ozone and oxygen at low temperatures to produce a silicon oxide layer having improved properties.
Quick Actions:
Nguyen, Bang. (1994). Method for depositing ozone/teos silicon oxide films of reduced surface (U.S. Patent No. 5356722). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5356722
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