The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 1994
Filed:
Jul. 26, 1993
Applicant:
Inventors:
Heng-Sheng Huang, Taipei, TW;
Chun Y Chang, Hsin Chu, TW;
Assignee:
United Microelectronics Corporation, Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 40 ; 437 84 ; 437 21 ; 437106 ; 437131 ; 148D / ; 148D / ;
Abstract
An FET thin film transistor is formed with a channel formed of a Si/Si.sub.1-x Ge.sub.x /Si three layer sandwich which serves as the carrier transfer channel. The percentage of germanium is preferably less than 30% and should be less than about 50%. The TFT can be structured as top gate, bottom gate or twin gate structure. The Si/Si.sub.1-x Ge/Si sandwich layer is processed in a continuous process under computer control.