The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Jan. 05, 1993
Yatsuo Ito, Jyouetsu-shi Niigata-ken, JP;
Takao Abe, Yanase, Annaka-shi, Gunma-ken, JP;
Tokio Takei, Kawanakajima-machi, Nagano-shi, Nagano-ken, JP;
Susumu Nakamura, Higashijou-machi, Nagano-shi, Nagano-ken, JP;
Hiroko Ota, Ooaza-awasa, Kosyoku-shi, Nagano-ken, JP;
Other;
Abstract
A bonded wafer comprising a filmy bond wafer, a base wafer, and an intermediate silicon dioxide layer, wherein the periphery of the bond wafer is etched; this bonded wafer is made by: subjecting the bond wafer to an oxidation treatment to form an oxide film over it; joining the two wafers in a manner such that the oxide film-covered face of the bond wafer is put on the base wafer to thereby sandwich the oxide film between the wafers; heating the combined wafers to thereby create a bonding strength between the two wafers; grinding the exposed face of the bond; etching the periphery of the bond wafer to remove the portion which is not in contact with the base wafer; and polishing the exposed face of the bond wafer until it becomes a thin film.