The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
Mar. 10, 1993
Applicant:
Inventors:
David J Keller, Boise, ID (US);
Debra K Gould, Nampa, ID (US);
Assignee:
Micron Semiconductor, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156650 ; 156651 ; 156652 ; 156653 ;
Abstract
An etch process wherein halogen ions are employed to bombard a patterned nitride layer thereby creating substantially vertical sidewalls, especially useful when etching submicron features. A process in which NF.sub.3 ions are combined with halogen ions in a reactive ion etcher to etch a patterned layer, followed, in situ, by an overetch of NF.sub.3 ions and an ionized hydrogen halide. An inert gas can be added to further increase the uniformity of the etch.