The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1994
Filed:
Apr. 28, 1992
Applicant:
Inventors:
Hiroki Tabuchi, Nara, JP;
Katsuji Iguchi, Yamatokoriyama, JP;
Makoto Tanigawa, Kitakatsuragi, JP;
Takayuki Taniguchi, Tenri, JP;
Hiroyuki Moriwaki, Nara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F / ;
U.S. Cl.
CPC ...
430-5 ; 430322 ; 430326 ;
Abstract
A method for forming a resist mask pattern by light exposure providing the steps of forming a resist layer on a semiconductor substrate, forming a phase shifter pattern for inverting a phase of exposed light in an upper portion of the resist layer itself or over the surface of the resist layer, exposing the surface of the semiconductor substrate including the phase shifter pattern, and forming a fine mask pattern below the edge of the phase shifter pattern.