The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1994
Filed:
Jan. 29, 1993
William J Boardman, San Jose, CA (US);
David P Chan, San Ramon, CA (US);
Kuang-Yeh Chang, Los Gatos, CA (US);
Calvin T Gabriel, Pacifica, CA (US);
Vivek Jain, Milpitas, CA (US);
Subhash R Nariani, San Jose, CA (US);
VLSI Technology, Inc., San Jose, CA (US);
Abstract
A method for making an anti-fuse structure characterized by the steps of forming a conductive base layer; forming an anti-fuse layer over the base layer; patterning the anti-fuse layer to form an anti-fuse island; forming an insulating layer over the anti-fuse island; forming a via hole through the insulating layer to the anti-fuse island; forming a conductive connection layer over the insulating layer and within the via hole; and patterning the conductive connection layer to form a conductive contact to the anti-fuse island. Preferably, the anti-fuse island comprises amorphous silicon which can optionally be covered with a thin layer of a titanium-tungsten alloy.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile