The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 14, 1994

Filed:

Apr. 30, 1992
Applicant:
Inventors:

Michael E Haslam, Highland Village, TX (US);

Charles R Spinner, III, Dallas, TX (US);

Assignee:

SGS-Thomson Microelectronics, Inc., Carrollton, TX (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K / ;
U.S. Cl.
CPC ...
174262 ; 174255 ; 174257 ; 174258 ;
Abstract

A structure and method for forming contact vias in integrated circuits. An interconnect layer is formed on an underlying layer in an integrated circuit. A buffer region is then formed adjacent to the interconnect layer, followed by forming an insulating layer over the integrated circuit. Preferably, the insulating layer is made of a material which is selectively etchable over the material in the buffer region. A contact via is then formed through the insulating layer to expose a portion of the interconnect layer. During formation of the contact via, the buffer region acts as an etch stop and protects the underlying layer. The buffer region also ensures a reliable contact will be made in the event of an error in contact via placement.


Find Patent Forward Citations

Haslam, Michael. (1994). Integrated circuit via structure (U.S. Patent No. 5321211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5321211

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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