The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1994
Filed:
Mar. 19, 1993
Applicant:
Inventors:
Sung C Kim, Boise, ID (US);
Scott Meikle, Boise, ID (US);
Assignee:
Micron Semiconductor, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156636 ; 156662 ; 437228 ; 437249 ; 5128 / ; 5128 / ;
Abstract
In semiconductor manufacture a method of shaping the features of a semiconductor structure using chemical mechanical planarization (CMP) is provided. During CMP, a relatively soft polishing pad is utilized to conform to and contour a topography of the semiconductor structure. Another layer of a material such as a dielectric (e.g. TEOS based silicon dioxide) can then be deposited over the contoured topography without the inclusion of voids. The method of the invention is particularly suited to the formation of void free dielectric layers.
Published as: