The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 1994

Filed:

Sep. 09, 1993
Applicant:
Inventors:

Ken T Chan, Wappingers Falls, NY (US);

Donald E Davis, Poughkeepsie, NY (US);

William A Enichen, Poughkeepsie, NY (US);

Cecil T Ho, Poughkeepsie, NY (US);

Edward V Weber, Poughkeepsie, NY (US);

Guenther Langner, Glen, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F / ; G01J / ; A61N / ;
U.S. Cl.
CPC ...
364490 ; 2504911 ; 2504922 ; 436518 ; 364491 ; 364489 ;
Abstract

A pattern is aligned and exposed with a lithography system so that chips larger than the deflection field can be formed by exposing M.times.N fields in a mosaic pattern. The method corrects the deflection field to compensate for the orientation of a previous pattern on a substrate and compensates for errors due to height caused by the beam landing non perpendicular to the target. Two basic procedures disclosed are called '3-mark' which are only applicable to 2.times.2 arrays of fields, and 'M.times.N' which covers the general situation, but with slightly less accuracy.


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