The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 1994

Filed:

May. 27, 1992
Applicant:
Inventors:

Chester Szwejkowski, Palisades, NY (US);

Ian S Latchford, Cupertino, CA (US);

Isamu Namose, Nagano, JP;

Kazumi Tsuchida, Narita, JP;

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

Seiko Epson Corp., , JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 1566591 ; 156662 ;
Abstract

The invention comprises an improvement in the process wherein a polysilicon layer, which is formed over a step on an integrated circuit structure and masked with a photoresist, is anisotropically etched to remove the exposed portions of the polysilicon layer leaving sidewall residues of a polymerized silicon/oxide-containing material adjacent the polysilicon lines. The improvement comprises treating the integrated circuit substrate with an aqueous ammonium-containing base/peroxide solution to remove the residues of polymerized silicon/oxide-containing material, without undercutting the remaining polysilicon.


Find Patent Forward Citations

Szwejkowski, Chester. (1994). Process for removal of residues remaining after etching polysilicon (U.S. Patent No. 5296093). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5296093

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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