The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 1994
Filed:
Mar. 09, 1992
Yasuhiro Horiike, Hiroshima, JP;
Kohei Kawamura, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Yasuhiro Horiike, Hiroshima, JP;
Abstract
A dielectric film of a capacitor is formed using the plasma CVD apparatus. A thin Ta layer is deposited on a semiconductor wafer by using Ta(N(CH.sub.3).sub.2).sub.5 gas and H.sub.2 radicals. The thin Ta layer is then oxidized by O.sub.2 radicals to form a thin Ta.sub.2 O.sub.5 layer. An Si.sub.3 N.sub.4 layer is then formed on the Ta.sub.2 O.sub.5 layer by using SiH.sub.4 and NH.sub.3 gases. The Ta.sub.2 O.sub.5 layer and the Si.sub.3 N.sub.4 layer are alternately laminated one upon the other several times to form a dielectric film of laminated structure. The dielectric film can thus have a composition close to the stoichiometric composition and it can be made high in dielectric constant and excellent in withstand voltage.