The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 1994
Filed:
Sep. 13, 1991
Applicant:
Inventors:
John T Yates, Jr, Allison Park, PA (US);
Peijun J Chen, Pittsburgh, PA (US);
M Luigi Colaianni, Pittsburgh, PA (US);
Assignee:
University of Pittsburgh of the Commonwealth System of Higher Education, Pittsburgh, PA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ;
U.S. Cl.
CPC ...
156628 ; 156657 ; 148D / ; 437937 ;
Abstract
A process for spatially controlling the etching of a silicon substrate by omic hydrogen. The process may be generally carried out at room temperature. The process involves implanting a boron dopant in selective portions of the silicon substrate followed by etching with atomic hydrogen. The implanted portions exhibit no etching by atomic hydrogen. A silicon device that is produced by this process is disclosed.