The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1994
Filed:
Jan. 02, 1992
Michael S Barnes, Mahopac, NY (US);
Melanie M Chow, Poughkeepsie, NY (US);
John C Forster, Poughkeepsie, NY (US);
Michael A Fury, Fishkill, NY (US);
Chang-Ching Kin, Poughkeepsie, NY (US);
Harris C Jones, Stormville, NY (US);
John H Keller, Poughkeepsie, NY (US);
James A O'Neill, New City, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A CHF.sub.3 -based RIE etching process is disclosed using a nitrogen additive to provide high selectivity of SiO.sub.2 or PSG to Al.sub.2 O.sub.3, low chamfering of a photoresist mask, and low RIE lag. The process uses a pressure in the range of about 200-1,000 mTorr, and an appropriate RF bias power, selected based on the size of the substrate being etched. The substrate mounting pedestal is preferably maintained at a temperature of about 0.degree. C. Nitrogen can be provided from a nitrogen-containing molecule, or as N.sub.2. He gas can be added to the gas mixture to enhance the RIE lag-reducing effect of the nitrogen.