The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Dec. 10, 1992
Yoshihisa Hirano, Tokyo, JP;
Yoshifumi Tahara, Tokyo, JP;
Isahiro Hasegawa, Tokyo, JP;
Keiji Horioka, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method of adjusting the temperature of a semiconductor wafer comprising mounting and attracting the wafer on a susceptor in a process chamber, exhausting and decompressing the process chamber, controlling the temperature of the wafer to become equal to a process temperature while cooling or heating the susceptor, supplying process gas into the chamber to process the wafer with this process gas, and introducing CF.sub.4 gas into interstices between the wafer and the susceptor through the susceptor to allow heat exchange to be achieved between them. CF.sub.4 gas includes same components as at least some of those of the process gas and it is more excellent in heat transmitting characteristic than helium gas. Even when CF.sub.4 gas is leaked into a process area, therefore, any influence is not added to the process.