The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1993
Filed:
Jul. 21, 1992
Applicant:
Inventors:
Ebrahim Andideh, Portland, OR (US);
Robert J Patterson, Beaverton, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437228 ; 437238 ; 437245 ; 148D / ; 20419232 ; 20419237 ;
Abstract
A process for filling submicron, high aspect ratio gaps, that may have reentrant angles, with a high quality ILD. A first ILD layer is deposited using PECVD to partially fill the gap. Medium-pressure sputter etching is then used to remove the bread-loaf edges and redeposit the etched material in the gaps, thereby allowing small gaps with high aspect ratios and reentrant angles to be completely filled. Finally, a second ILD layer that completely fills the gap is deposited using PECVD.