The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 1993

Filed:

Mar. 23, 1992
Applicant:
Inventors:

Hirotoshi Yamagishi, Annaka, JP;

Masanori Kimura, Annaka, JP;

Hideo Arai, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
1566162 ; 1566207 ; 15662073 ; 15662074 ; 156602 ;
Abstract

The present invention is intended to provide a method of growing a silicon monocrystalline rod by an FZ process, wherein the dopant distribution of the silicon monocrystalline rod in the diametrical direction is made microscopically uniform, characterized in that a magnetic field forming means is arranged above and/or below a melting zone of said silicon monocrystalline rod to surround said silicon monocrystalline rod and a magnetic field is applied to the melting zone of the silicon monocrystalline rod through said magnetic forming means, and preferably the magnetic field forming means is constituted by supplying a direct electric current through a solenoid coil surrounding said silicon monocrystalline rod.


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