The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1993
Filed:
Dec. 09, 1991
Kwang-Ming Lin, Hsin-Chu, TW;
Lih-Shyng Tsai, Hsin-Chu, TW;
Jiunn-Jyi Lin, Hsin-Chu, TW;
Chin-Twan Wei, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
The method of forming a void-free surface on aluminum-copper metallurgy after stripping of resist is described. There is provided an aluminum-copper metallurgy on a suitable substrate, such as a semiconductor integrated circuit wafer during manufacture. A resist layer is formed over surface. The resist layer is exposing, developing and the developed resist is used as an etch mask to etch a layer, such as an insulating layer on the metallurgy which results in exposing the aluminum-copper metallurgy surface. The resist etch mask is removed by plasma oxygen ashing in presence of the exposed aluminum-copper surface. Rapid thermal annealing of the aluminum-copper metallurgy at a temperature of between about 400.degree. to 550.degree. C. is performed. The resulting surfaces are rinsed to remove any residual resist material. The result is a void-free aluminum-copper metallurgy surface.