The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 1993
Filed:
Jan. 22, 1992
Masaru Hori, Yokohama, JP;
Hiroyuki Yano, Yokohama, JP;
Keiji Horioka, Kawasaki, JP;
Hisataka Hayashi, Urayasu, JP;
Sadayuki Jimbo, Yokohama, JP;
Haruo Okano, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a carbon film on a target film formed on a substrate, forming an organic film pattern on the carbon film, etching the carbon film using the organic film pattern as a mask to form a carbon film pattern, and heating the substrate, supplying an etching gas having halogen atoms to a reaction area where the substrate is stored, applying an electric field to the reaction area to generate a discharge, and anisotropically etching the silicon oxide film using the carbon film pattern as a mask and a plasma formed by the discharge.