The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 10, 1993

Filed:

Jul. 01, 1991
Applicant:
Inventors:

Yasunori Narizuka, Hiratsuka, JP;

Syoozi Ikeda, Yokohama, JP;

Akira Yabushita, Yokohama, JP;

Masakazu Ishino, Yokohama, JP;

Juichi Kishida, Yokohama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01C / ;
U.S. Cl.
CPC ...
338308 ; 338309 ; 2041921 ; 427101 ; 437 60 ;
Abstract

A thin film resistor having a characteristic that an increase phenomenon of a resistance controlled at a high temperature is generated. The resistor is obtained by controlling its composition and manufacturing method so as to suppress an increase in the resistance of a Cr-Si resistor thin film due to deposition of chromium silicide at a high temperature. A sputtering target, which is used as a raw material for forming the thin film, is made from chromium silicide and silicon so that some chromium silicide is already formed immediately after deposition, and chromium oxide and silicon oxide are contained in the thin film so as to suppress the speed whereat chromium and silicon, which do not form silicide, form silicide by heating after deposition and to allow the above silicide formation to advance slowly.


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