The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 1993
Filed:
Apr. 08, 1991
Recai Sezi, Rottenbach, DE;
Horst Borndorfer, Erlangen, DE;
Eva Rissel, Forchheim, DE;
Rainer Leuschner, Erlangen, DE;
Michael Sebald, Hessdorf-Hannberg, DE;
Hellmut Ahne, Rottenbach, DE;
Siegfried Birkle, Hochstadt A/Aisch, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
High resolution resist structures with steep edges are obtained using standard equipment, even in cases involving critical contact-hole planes. First, a photoresist layer containing a polymer with chemically reactive groups and a photoactive component based on diazoketone or quinone diazide is deposited on a substrate. The photoresist layer is then irradiated with a patterned image and treated with a polyfunctional organic compound having functional groups that can chemically react with the reactive groups of the polymer. This step is followed by a maskless flood exposure. The photoresist layer irradiated in this manner is then treated with a metal-containing organic compound having at least one functional group capable of chemical reaction with the reactive groups of the polymer, followed by etching in an oxygen-containing plasma.