The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 1993
Filed:
Mar. 09, 1992
Applicant:
Inventors:
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ;
U.S. Cl.
CPC ...
156651 ; 1566591 ; 156662 ; 7351 / ;
Abstract
This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow.