The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 08, 1993

Filed:

Feb. 27, 1992
Applicant:
Inventors:

Donna R Cote, Poughquag, NY (US);

David M Dobuzinsky, Essex Junction, VT (US);

Son V Nguyen, Williston, VT (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156654 ; 156657 ; 437236 ;
Abstract

Disclosed is a process for etching a film of boron nitride with high selectivity to a layer of silicon dioxide or silicon nitride. The process involves exposing the film to a plasma formed from a mixture of an oxygen-containing gas, such as oxygen, and a small amount of a fluorine-containing gas, such as CF.sub.4. The process provides a high etch rate and anisotropic profiles, as well as good uniformity.


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