The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1993
Filed:
Mar. 01, 1991
Jacques Leibovitz, San Jose, CA (US);
Maria L Cobarruviaz, Cupertino, CA (US);
Kenneth D Scholz, Palo Alto, CA (US);
Clinton C Chao, Redwood City, CA (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
A method for fabricating high density multi-chip carriers for integrated circuits includes the steps of forming a circuit pattern on a substrate, depositing a composite metal layer and a photoresist layer over the circuit pattern, forming apertures in the photoresist layer, forming solid metal vias in the apertures and, then, removing the photoresist layer. After removal of the first photoresist layer, a second photoresist layer is deposited over the solid vias and the circuit pattern. With the second photoresist layer in place, unprotected portions of the composite layer are etched away. Then, the second photoresist layer is stripped away. Next, a layer of photosensitive dielectric material is formed over the structure and, finally, sufficient portions of the photosensitive dielectric material are removed to expose the top surfaces of the solid vias.