The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1993
Filed:
Apr. 15, 1991
Lynwood W Swanson, Portland, OR (US);
John M Lindquist, Portland, OR (US);
FEI Company, Beaverton, OR (US);
Abstract
Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area. The iodine vapor, which is focused by heating solid iodine to a temperature of 30.degree. C. to 50.degree. C., is adsorbed on the surface of the semiconductor device and aids in the selective sputtering of material to be impinged by the ion beam by enabling a chemical reaction at the material's surface. The iodine may be initially handled in a solid state, exhibiting a low vapor pressure, and is then heated to moderate temperatures inside the focused ion beam system without presenting a toxic hazard. The low reactivity of the iodine enables a high degree of contrast in reaction between the area struck by the ion beam and adjoining areas whereby accurate micromachining can be accomplished.