The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1992
Filed:
Aug. 19, 1991
Hideto Sugawara, Tokyo, JP;
Masayuki Ishikawa, Goleta, CA (US);
Yoshihiro Kokubun, Yokohama, JP;
Yukie Nishikawa, Narashino, JP;
Shigeya Naritsuka, Yokohama, JP;
Kazuhiko Itaya, Tokyo, JP;
Genichi Hatakoshi, Yokohama, JP;
Mariko Suzuki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.