The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 01, 1992

Filed:

Feb. 20, 1991
Applicant:
Inventors:

Hiroshi Iwata, Osaka, JP;

Shigeru Noguchi, Osaka, JP;

Satoshi Ishida, Osaka, JP;

Keiichi Sano, Osaka, JP;

Shoichiro Nakayama, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-4 ; 357 2315 ; 357-2 ; 357 236 ;
Abstract

A semiconductor device according to the present invention comprises a semiconductor thin film, and first and second insulator films formed in such arrangement that the semiconductor thin film being sandwiched therebetween. First and second graded layers each containing a constitutent element of the semiconductor thin film and impurities and having a content of the impurities decreased in the direction of the semiconductor thin film are interposed between the semiconductor thin film and the respective insulator films, thereby to relax internal stress produced in the junction interfaces of the semiconductor thin film and the insulator films and to prevent cracking from occurring in the junction interfaces.


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