The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 1992

Filed:

Jun. 14, 1990
Applicant:
Inventors:

Mitsuo Tokuda, Tachikawa, JP;

Junzou Azuma, Yokohama, JP;

Toru Otsubo, Fujisawa, JP;

Yasuhiro Yamaguchi, Chigasaki, JP;

Ichirou Sasaki, Yokohama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
118723 ; 118715 ; 118719 ; 156345 ; 20429831 ; 20429833 ; 20429838 ; 20429802 ; 20429807 ;
Abstract

Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate. Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

Published as:

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