The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 1992
Filed:
Oct. 31, 1990
Sadayuki Okudaira, Ome, JP;
Hideo Komatsu, Tokyo, JP;
Osamu Matsumoto, Akishima, JP;
Motoichi Kanazawa, Tokyo, JP;
Kokusai Electric Co., Ltd., Tokyo, JP;
Abstract
A plurality of resist membranes are formed on a membrane of goods to be etched. The top resist is patterned by light beam, laser beam, X-rays, or electron beams. The wafer is transferred to a first unit into which discharging gas is introduced and plasma is generated in order to dry-etch the multilayer resists. The multilayer is transferred to a second unit in vacuum environment. In the second unit, the membrane of the wafer is dry-etched in a predetermined depth. The wafer then is transferred to a third unit in vacuum atmosphere so as to remove part of the resist depending a mask pattern and treat the resist by plasma.