The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1992
Filed:
Jul. 24, 1990
Hua-Shuang Kong, Raleigh, NC (US);
Thomas G Coleman, Durham, NC (US);
Calvin H Carter, Jr, Cary, NC (US);
Cree Research, Inc., Durham, NC (US);
Abstract
The invention is a method, and associated apparatus and product, of forming extremely pure epitaxial layers of silicon carbide by reducing the carrier concentration of residual nitrogen in silicon carbide formed by chemical vapor deposition processes. The method comprises placing a substrate upon which an epitaxial layer of silicon carbide will form upon a susceptor, and in which the susceptor is formed of a material that will not generate undesired nitrogen-containing out gases at the temperatures at which chemical vapor deposition of silicon carbide will take place from appropriate source gases. The substrate is heated to a temperature at which chemical vapor deposition of silicon carbide will take place from appropriate source gases by inductively heating the susceptor using an induction frequency that heats the susceptor material. Silicon-containing and carbon-containing source gases are then introduced that will form an epitaxial layer of silicon carbide upon the heated substrate.