The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1992
Filed:
Jul. 25, 1990
Applicant:
Inventors:
Kazuhiko Sagara, Hachioji, JP;
Kiyoo Itoh, Higashi-Kurume, JP;
Goro Kitsukawa, Tokyo, JP;
Yoshifumi Kawamoto, Kanagawa, JP;
Yoshiki Kawajiri, Hachioji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 34 ; 437 58 ; 437162 ; 148D / ;
Abstract
Sources and drains of MOS transistors are formed after the formation of an emitter of a bipolar transistor, whereby the sources and drains are made smaller in thickness than the emitter. Since the sources and drains are not subjected to a high-temperature heat treatment conducted in the formation of the emitter, there is no fear of increase in thickness of the sources and drains caused by the diffusion of impurities. There can be formed a BiCMOS having a high integration density and superior characteristics.