The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 1992
Filed:
Nov. 19, 1990
Mark T Bohr, Aloha, OR (US);
Lawrence N Brigham, Jr, Beaverton, OR (US);
Shahab Hossaini, Aloha, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Front end processing for a CMOS substrate resulting in the formation of n-wells, p-wells, channel stops and field oxide regions. Both the n-type and p-type dopant are implanted through silicon nitride members with one type dopant being first blocked by a first layer of photoresist and the second dopant by a second layer of photoresist. The field oxide regions are grown after the first dopant is implanted. Relatively low level ion implantation is used and additional threshold adjusting implants are not needed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile