The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 1991

Filed:

Nov. 29, 1989
Applicant:
Inventors:

Suryadevara V Babu, Potsdam, NY (US);

Joseph G Hoffarth, Binghamton, NY (US);

Allan R Knoll, Endicott, NY (US);

Walter E Mlynko, Vestor, NY (US);

John F Rembetski, Burlington, VT (US);

Kenneth D Mack, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156651 ; 156668 ;
Abstract

A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value. When the above is repeatedly done a substantially higher average etch rate is obtained.


Find Patent Forward Citations

Babu, Suryadevara. (1991). Method of plasma etching a substrate with a gaseous organohalide compound (U.S. Patent No. 5053104). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5053104

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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