The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1991
Filed:
Jul. 12, 1990
Jin Onuki, Hitachi, JP;
Masayasu Nihei, Hitachi, JP;
Yasushi Koubuchi, Kodaira, JP;
Motoo Suwa, Hitachi, JP;
Shinichi Fukada, Hitachi, JP;
Katsuhiko Shiota, Tohkai, JP;
Kunio Miyazaki, Hitachi, JP;
Tatsuo Itagaki, Hinode, JP;
Jun Sugiura, Musashino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs. The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.