The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 1991

Filed:

Feb. 07, 1990
Applicant:
Inventors:

Shigeru Mizuno, Fuchu, JP;

Isamu Morisako, Fukuoka, JP;

Assignee:

Anelva Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118725 ; 118715 ; 118724 ;
Abstract

A low pressure vapor phase growth apparatus is disclosed. The apparatus comprises a window made of a light-transmissive material, a gas feeder for feeding a reactive gas, an exhauster for pumping gases out after a chemical reaction, a lamp for effecting radiant heating of a substrate with a radiation emitted therefrom and transmitted through said light-transmissive window, and a cooling mechanism for forcibly cooling said light-transmissive window. The substrate and the light-transmissive window are maintained in no mutual contact with a gap therebetween having a width of at most the mean free path of a gas existing in the gap. The reactive gas fed through the gas feeder undergoes the chemical reaction on the obverse surface of the substrate to form a thin film thereon.


Find Patent Forward Citations

Loading…