The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 1991
Filed:
Jun. 27, 1990
Applicant:
Inventors:
David P Favreau, Coopersburg, PA (US);
Jane A Swiderski, Kunkletown, PA (US);
Daniel J Vitkavage, Zionsville, PA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156644 ; 156646 ; 156651 ; 156652 ; 156657 ; 1566591 ; 437 40 ; 437 59 ; 437200 ; 437228 ;
Abstract
An integrated circuit design and method for its fabrication are disclosed. A bilevel-dielectric is formed to cover the active regions of a transistor and raised topographic features such as a gate runner. The upper level of the dielectric is planarized to provide for easier subsequent multilevel-conductor processing. Windows are opened in the bilayer dielectric by etching through the upper level of the dielectric, stopping on the lower level of the dielectric. Then the etch procedure is continued to etch through the lower level of the dielectric.